This page contains information and links to recipes/datasheets spin-coated materials used in the facility. In general, the following information is provided for the following materials:
- Photo Lithography Recipe section: Has links to nominal recipes (spin, bake, exposure, develop etc.) to provide the user with starting points are found in the. Substrate, surface materials, pattern size can often affect process parameters.
- Stocked Lithography Chemical + Datasheets: Lists all stocked photolith. chemicals, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.
- E-beam Lithography Resists: Links to nominal recipes may be provided in the E-Beam Lithography Recipe Section. Substrates and patterns play a large role in process parameters. Datasheets provided for reference.
- Nanoimprinting Resists: Datasheets are provided. Any recipes provided are for use in the Nano-Imprint (Nanonex NX2000) system only and are found in the Nanoimprinting Recipes section.
- Underlayers: These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided and some recipes are found in the Lift-Off Techniques section.
- Holography: For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square. Recipes for silicon substrates are provided in the Holography section.
- Anti-Reflection Coatings: Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Recipes using these materials are found within the photoresist recipes themselves. Datasheets are provided for reference on use of the materials.
- Contrast Enhancement Materials (CEM): Used for resolution enhancement. Not for use in contact aligners. Recipes using these materials are found within the photoresist recipes themselves. Datasheets also provided.
- Adhesion Promoters: These are used to improve wetting of photoresists to your substrate. Datasheets are provided on use of these materials.
- Low-K Spin-on Dielectrics: Datasheets are provided for BCB, Photo-BCB, and SOG for reference on use. Some recipes are provided in the Low-K Spin-On Dielectric Recipes section.
- Developers and Removers: Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching. Datasheets provided for reference.
- R = Recipe is available. Clicking this link will take you to the recipe.
- A = Material is available for use, but no recipes are provided.
|Positive Resists||SUSS MJB-3||SUSS MA-6||Stepper 1
|SPR 955 CM-0.9||A||R||R||R|
|SPR 955 CM-1.8||A||A||R||R|
|THMR-IP3600 HP D||A||A|
|Negative Resists||SUSS MJB-3||SUSS MA-6||Stepper 1
|SU-8 2005,2010, 2015||A||R||A||A|
|SUSS MJB-3||SUSS MA-6||Stepper 1
E-Beam Lithography Recipes
- Under Development.
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
To Be Added
- Thermal Nanoimprint Process and Tutorial
- UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process
- Standard Holography Process - on SiO2 on Si
- Holography Process Variations - Set-up Angle - Etching into SiO2 and Si
- Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width
- Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching
Low-K Spin-On Dielectric Recipes
- Lift-Off Tutorial and Limits
- How it works, process limits and considerations for designing your process
- I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner
- DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer
Chemicals Stocked + Datasheets
The following is a list of the lithography chemicals we have available in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.