The UCSB nanofabrication facility offers a wide spectrum of tools for your research needs.

 

Listed below is a broad overview of our capabilities.

 

Remote processing is also available.

 

If you would like to investigate other processing or characterization possibilities for your project, please contact one of the following individuals to initiate the request:

Tom Reynolds:

This email address is being protected from spambots. You need JavaScript enabled to view it., (805) 893-3918 ext. 215

Brian Thibeault:

This email address is being protected from spambots. You need JavaScript enabled to view it., (805) 893-2268

Claudia Gutierrez
This email address is being protected from spambots. You need JavaScript enabled to view it., (805) 893-7989

 

 

Lithography

E-beam Lithography: JEOL 6300FS

  • Resolution to 8 nm
  • 20 nm resolution in 500 um x 500 um field

Optical Lithography

  • Holography ≈ 200 nm
  • Projection Stepper ≈ 400 nm resolution; 150 nm registration
  • Contact Lithography (backside capability)

Nanoimprint Lithography

  • Thermal process to 200°C; 600 psi
  • UV curing
Thin Film Deposition

E-beam and Thermal Evaporation

  • Ai, Ti, Al, Au, Ni, Pd, Pt, Ag, Ge, Zn, W, Ta
  • Dielectric: SiO2, SrF, MgO, Ti O2, Ta2O5, SiO
  • Other materials are possible

PECVD

  • SiO2, SiON, Si3N4, a-Si

Sputtering

  • Si, Co, Ni, Ti, W, Au, Al, ITO, SiO2, SiN, TiO2, AlN, Al2O3
  • Other materials are possible

ALD

  • Al2O3, HfO2, ZrO2, TiO2, SiO2, AlN, HfN, TiN
Dry Etching

CH4, H2, Ar RIE

  • II-VI etching
  • III-V electronic/optoelectronic devices

SF6, CHF3, CF4, O2, Ar RIE/ICP

  • General silicon, oxide, and nitride etch
  • Separate Bosch Si etch Silicon Carbides for MEMS
  • Call about special materials.

BCl3, Cl2, SiCI4, O2 Ar RIE/ICP

  • General semiconductor and metal
  • III-V etching with heated chuck for InP
  • Call about special materials.

XeF2 etching of Silicon and Germanium

Thin Film Characterization
  • SEM: FEI Sirion, JEOL7600
  • Profilometry
  • Spectroscopic Ellipsometry
  • Reflectometry
  • Probe Station with Curve Tracer
  • 4-Point Resistivity Mapping
  • Film Stress Measurement
  • AFM

 

Other Processes
  • Contact Annealing
  • Wet Chemical Etching
  • Critical Point Drying
  • Rapid Thermal Annealing
    • 1200°C in N2, H2N2, dry air
    • III-V, Si, other materials
  • Flip-chip Bonding
  • Wafer Bonding to 600°C
  • Molecular Vapor Deposition
Other Resources

Facility users will benefit by having access to multiple labs on campus to perform their research.  The list of Mult-User Labs can be found at the following website:

 http://www.bfs.ucsb.edu/procurement/contracts-property/multi-user-lab-access