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We support a broad line of lithography, thin-film deposition, reactive ion etching, and characterization tools in support of device fabrication for a variety of materials, including InP, GaAs, GaN, SiC, Si, and other novel materials.

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Over 40% of our more than 500 per annum user community are from outside academic institutions and industry, doing significant research in our facility.

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Mask Aligner / MJB UV 400 IR

IR Aligner closeupEquipment Description:
Mask Aligner / MJB 3 UV400 IR

Karl Suss America, Inc.
P.O. Box 157
Suss Drive
Waterbury Center, Vt. 05677
Phone: (802) 244-5181
Fax: (802) 244-5103





General Information and Usage:

This is a high-performance mask aligner used for contact exposure processes. It is a versatile, user-friendly compact unit that has a foot print of 600 x 800 mm². The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is far into the submicron region. Our left unit is configured for the near-UV window (365 and 405 nm) and both left and right units have the "vacuum contact" option extending resolution to ~0.5 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, only give resolution to 1-2 microns. Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Special black chucks may be used for transparent materials. For backside alignment through opaque our IR aligner can be used and is described below. Masks up to 4 inches in size can be used although patterns should be well away from the maskplate edges due to the fact such plates can only be shifted ~ x mm and substrate chuck +/- 3 mm.


Equipment Specifications:

  • Wafer size: 3" max.
  • Substrate size: 3" x 3" max.
  • Wafer / substrate thickness: 0-4.5 mm
  • Exposure optics:
    • Left unit: 280-450 nm/200 W mercury lamp
    • Right unit: 350-450 nm/200 W mercury lamp
    • IR unity: 280-450 nm/200 W mercury lamp
  • Other manufacturer options:
    • DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)
    • DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)
    • 193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)
  • Uniformity:
      • ±3% over 2" diameter
      • ±5% over 3" diameter

Special Notes / Additional Comments:

  • All units have 200 W mercury lamps
  • Infrared Transmission Alignment System
  • All models can be equipped for back side alignment using infrared light; this is used when a mask needs to be aligned to features on the substrate backside but exposed to light on the front or resist side
  • For processes using this tool please go to the contact lithography process page
  • This includes:
    • Modified alignment stage
    • Motor positioned IR light source under chuck
    • Special glass chuck transparent to IR but opaque to UV and visible light
    • In-line video camera/monitor for substrate backside viewing and alignment to frontside
    • (Note: The vacuum contact mode is not allowed in the ITA System)


Contact Information:

For additional information regarding the Mask Aligner / MJB UV 400 IR or if you would like to inquire about using the UCSB Nanofabrication Facility, please contact This email address is being protected from spambots. You need JavaScript enabled to view it. using the telephone number or e-mail address below.

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Phone: (805) 893-3918 ext. 216
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