Wet Etching Recipes

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Contents

Compound Semiconductor Etching

Guide to references on III±V semiconductor chemical etching Please add any confirmed etches from this reference to the [[9 The Master Table of Wet Etching (Include All Materials)Master Table of Wet Etching. Thanks,

Metal Etching

Silicon etching

Etch rates for micromachining processing Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,

Etch rates for micromachining processing-part II Please add any confirmed etches from this reference to the Master Table of Wet Etching. Thanks,

Dielectric etching

Organic removal

Gold Plating

Chemi-Mechanical Polishing (CMP)

Example Wet Etching Table

How to use the Master Table of Wet Etching:

When entering a new etch into the table make a row for every etchant used in the solution such that the information can be sorted by etchant. For example, the InP etch HCl:H3PO4(1:3) and H3PO4:HCl(3:1). Likewise, if etch is known to be selective to multiple materials the etch should have a row for each material. For example HCl:H3PO4(1:3) is selective to both InGaAs and InGaAsP.

This multiple entry method may seem laborious for the person entering a new etch, however the power of sorting by selective materials and chemicals in a table with all materials is great.


Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High Lamponi (p.102) Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High Lamponi (p.102) Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High Lamponi (p.102) Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High Lamponi (p.102) Example Jon Doe Example

The Master Table of Wet Etching (Include All Materials)

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Ref. Notes Confirmed by Extra column
InP HCl:H3PO4(1:3) ~1000 Highly InGaAs High Lamponi (p.102) Example Jon Doe Example
InP HCl:H3PO4(1:3) ~1000 Highly InGaAsP High Lamponi (p.102) Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAs High Lamponi (p.102) Example Jon Doe Example
InP H3PO4:HCl(3:1) ~1000 Highly InGaAsP High Lamponi (p.102) Example Jon Doe Example
Al2O3 (ALD Plasma 300C) 300MIF ~1.6 High Measured in-house Rate slows with time, Selective to most non-Al Materials JTB Example
Al2O3 (ALD Plasma 300C) 400K ~2.2 High Measured in-house Rate slows with time, Selective to most non-Al Materials JTB Example
Al2O3 (ALD Plasma 300C) 400K(1:4) ~1.6 High Measured in-house Rate slows with time, Selective to most non-Al Materials JTB Example
Al2O3 (ALD Plasma 300C) NH4OH:H2O2:H2O (1:2:50) ~<0.5 High Measured in-house Rate slows with time JTB Example
Al2O3 (ALD Plasma 300C) H2O2:NH4OH:H2O (2:1:50) ~<0.5 High Measured in-house Rate slows with time JTB Example
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