ICP Etch 1 (Panasonic E626I)

From UCSB Nanofab Wiki
Jump to: navigation, search
ICP Etch 1 (Panasonic E626I)
ICP2.jpg
Tool Type Dry Etch
Location Bay 2
Supervisor Don Freeborn
Supervisor Phone (805) 893-3918x216
Supervisor E-Mail dfreeborn@ece.ucsb.edu
Description ?
Manufacturer Panasonic Factory Solutions, Japan
ICP Etch 1 (Panasonic E626I) Recipes
Sign up for this tool

About

This is a three-chamber tool for etching of a variety of materials. Chamber one is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. Chamber two is a 2000 W ICP chamber configures for plasma etching of photoresist and other materials such as BCB. The substrate is not biased and the chamber has CF4 and O2 for the gases. Chamber three is a DI rinsing chamber for rinsing off any etch byproducts before removing the sample from the system. The system accepts 6” wafers or pieces mounted to the wafers. In Automatic mode, multiple wafers can be run through automatically with the cassette-based system.of low-stress Nitride films.

Detailed Specifications

  • 1000 W ICP source, 500 W RF Sample Bias Source in etching chamber
  • RT - 80°C sample temperature for etching
  • Optimal Emission Monitoring
  • Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
  • Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, and O2 in etch chamber
  • 2000 W ICP ashing chamber
  • RT - 250°C sample temperature for ashing
  • Ashing pressures 50 mT - 500 mT
  • O2, N2, CF4, H2O Vapor for ashing chamber
  • Multiple 6” diameter wafer capable system
  • Pieces possible by mounting to 6” wafer

Documentation

Personal tools
Namespaces

Variants
Actions
Navigation
Equipment
Processes
Tools
TEMPORARY