Unaxis High Density PECVD

PECVD Plasma Therm 790 for Oxides and NitridesEquipment Description:
High Density ICP PECVD

Manufacturer:
Unaxis

Model:
VLR

Operating Instructions:
Instructions

 

 

 

General Information and Usage:

This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and RT-350°C operation. This chamber has 100% SiH4, N2, O2, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO2 and Si3N4, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be done down to below 50°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.

 

Detailed Specifications:

  • 1000W ICP source, 600W RF Sample Bias Source in etching chamber
  • RT - 350°C sample temperature
  • 100% SiH4, Ar, N2, O2
  • Multiple 4” diameter wafer capable system
  • Pieces possible by mounting or placing on 4 ” wafer

 

Contact Information:

For additional information regarding the Unaxis High Density PECVD or if you would like to inquire about using the UCSB Nanofabrication Facility, please contact This email address is being protected from spambots. You need JavaScript enabled to view it.  using the telephone number or e-mail address below. 


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Phone: (805) 893-3918 ext. 217
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Technical and educational staff services are possible through the generosity of the National Science Foundation through support via the NNIN.