PECVD Plasma Therm 790 for Oxides and Nitrides

PECVD Plasma Therm 790 for Oxides and Nitrides

PECVDEquipment Description:
PECVD Plasma Therm 790 For Oxides And Nitrides

Manufacturer:
Plasma-Therm

Model:
790

 

 

 

 

 

General Information and Usage:

This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min. Si3N4 is produced from SiH4/He 2%/98% and NH3 at 250°C or 350°C. The more dense films are produced at 350°C. The stress of the nitride can be altered by adjusting the N2:He ratio of the deposition. CF4/O2 plasmas are used to clean the chamber between depositions.

These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. The system is fully programmable with windows-based software and has a wide array of pre-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved.

 

Detailed Specifications:

  • Gases used: NH3, N2O, 2%SiH4/He, N2,CF4 and O2
  • ~ 10mT ultimate chamber pressure
  • 13.56 Mhz excitation freq.
  • Sample size: pieces to 6” wafers
  • Automatic tuning network
  • RF Power control
  • Full computer operation
  • Standard recipes for a variety of film thicknesses

 

Contact Information:

For additional information regarding the PECVD Plasma Therm 790 For Oxides And Nitrides or if you would like to inquire about using the UCSB Nanofabrication Facility, please contact This email address is being protected from spambots. You need JavaScript enabled to view it.  using the telephone number or e-mail address below. 


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Phone: (805) 893-3918 ext. 210
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Technical and educational staff services are possible through the generosity of the National Science Foundation through support via the NNIN.