250 nm Pitch Interference Lithography System

Interference Lithography System

Equipment Description:
Custom Built Interference Lithography

Manufacturer:
Laser: Kimmon

Model:
25mW Single TEM00 mode HeCd, 325 nm laser

Interference Lithography Processing

 

 

General Information and Usage:

The interference lithography system at UCSB uses a 15mW, single-mode, 325 nm HeCd laser that is filtered and expanded by pinhole filters to produce the large area exposure beam. The system uses a simple mirror configuration with a fixed 90 degree angle between the mirror and sample. The entire mirror/sample assembly is rotated in 0.1 degree increments to change the grating pitch from ~ 200 nm to ~ 280 nm (35 to 55 degrees) over an ~ 2 cm x 2 cm exposure area. SPR3001 resist spin-coated to ~ 80 nm thickness is used for grating exposure. 2-D gratings can be formed by rotating the sample and doing multiple exposures. Total exposure times are controlled by a manual shutter and are generally several minutes in length.

 

Equipment Specifications:

  • 15 mW single TEM mode HeCd laser
  • ~ 2 cm x 2 cm uniform exposure area
  • ~ several minute exposure times
  • Grating period adjustable from ~200 to ~280 nm with a single stage

 

Contact Information:

For additional information regarding the Interference Lithography System or if you would like to inquire about using the UCSB Nanofabrication Facility, please contact This email address is being protected from spambots. You need JavaScript enabled to view it.  using the telephone number or e-mail address below.

This email address is being protected from spambots. You need JavaScript enabled to view it.
Phone: (805) 893-4689
E-Mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

 

Technical and educational staff services are possible through the generosity of the National Science Foundation through support via the NNIN.