Frontiers in Nanoscale Transistors and Electronics

An exploratory symposium on electron device

Sponsored by NSF National Nanotechnology Infrastructure Network

Guided by critical system and circuit requirements, this symposium will define candidate devices, associated materials, and process technologies for future generations of electron devices. This workshop will address the problems, difficulties when working with:

  • future digital systems (VLSI) as these migrate to few-nm device dimensions
  • wireless communications systems as these migrate towards THz frequencies

Each session will end with a brief discussion identifying primary obstacles. Each day will end with an interactive discussion on the best approaches to address these obstacles.

(Please click on the talk titles below to download in PDF)


Monday, February 6, 2012

AM Talks
Opening comments
Mark Lundstrom            
What’s Different Below 10 nm?
Paul Solomon
Low Voltage Device Options
Tsu-Jae King
CMOS Scaling to the End of the Roadmap
Mark Rodwell             
nm Transistor Scaling for VLSI and THz Applications
Sandip Tiwari      
Scale Changes in Silicon Electronics: Issues in Reductionism & Constructionism
PM Talks
Debdeep Jena
2D Crystals for Next Generation Electronics
Joerg Appenzeller 1D FETS and Spin-Based Devices
Alan Seabaugh Compound Semiconductor Tunnel Transistors
Jeff Welser
Challenges for Post-CMOS Devices and Architectures


Tuesday, February 7, 2012

AM Talks
Opening Comments
Jack Pekarik
High-frequency Potential for Future Silicon CMOS & BiCMOS Technologies
Gabriel Rebeiz            
Advanced SiGe and CMOS Nodes for Millimeter-wave and THz Applications
Ali Hajimiri         
Silicon THz
Tomas Palacios          
GaN and Graphene: Extreme Materials for THz Electronics
Keisuke   Shinohara       
Scaling Challenges of GaN and InP-HEMTs Towards THZ Operation
PM Talks
Jesus del Alamo
InAs HEMTs: The Path to THz Electronics
Miguel Urteaga
InP Transistor Technologies for THz Circuit Applications
Thomas Crowe          
THz Test & Measurement Equipment Using Diode Technology
William Deal              
InP High Electron Mobility Transistors for Terahertz Electronics

Technical and educational staff services are possible through the generosity of the National Science Foundation through support via the NNIN.