capabilities main pic

The UCSB nanofabrication facility offers a wide spectrum of tools for your research needs.


Listed below is a broad overview of our capabilities.

Click here for more details about our equipment.


Remote processing is also available.


If you would like to investigate other processing or characterization possibilities for your project, please contact:

Tom Reynolds:

This email address is being protected from spambots. You need JavaScript enabled to view it., (805) 893-3918 ext. 215

Brian Thibeault:

This email address is being protected from spambots. You need JavaScript enabled to view it., (805) 893-2268




E-beam Lithography: JEOL 6300FS

  • Resolution to 8 nm
  • 20 nm resolution in 500 um x 500 um field

Optical Lithography

  • Holography ≈ 200 nm
  • Projection Stepper ≈ 400 nm resolution; 150 nm registration
  • Contact Lithography (backside capability)

Nanoimprint Lithography

  • Thermal process to 200°C; 600 psi
  • UV curing
Thin Film Deposition

E-beam and Thermal Evaporation

  • Ai, Ti, Al, Au, Ni, Pd, Pt, Ag, Ge, Zn, W, Ta
  • Dielectric: SiO2, SrF, MgO, Ti O2, Ta2O5, SiO
  • Other materials are possible


  • SiO2, SiON, Si3N4, a-Si


  • Si, Co, Ni, Ti, W, Au, Al, ITO, SiO2, SiN, TiO2, AlN, Al2O3
  • Other materials are possible


  • Al2O3, HfO2, ZrO2, TiO2, SiO2, AlN, HfN, TiN
Dry Etching

CH4, H2, Ar RIE

  • II-VI etching
  • III-V electronic/optoelectronic devices

SF6, CHF3, CF4, O2, Ar RIE/ICP

  • General silicon, oxide, and nitride etch
  • Separate Bosch Si etch Silicon Carbides for MEMS
  • Call about special materials.

BCl3, Cl2, SiCI4, O2 Ar RIE/ICP

  • General semiconductor and metal
  • III-V etching with heated chuck for InP
  • Call about special materials.

XeF2 etching of Silicon and Germanium

Thin Film Characterization
  • SEM: FEI Sirion, JEOL7600
  • Profilometry
  • Spectroscopic Ellipsometry
  • Reflectometry
  • Probe Station with Curve Tracer
  • 4-Point Resistivity Mapping
  • Film Stress Measurement
  • AFM


Other Processes
  • Contact Annealing
  • Wet Chemical Etching
  • Critical Point Drying
  • Rapid Thermal Annealing
    • 1200°C in N2, H2N2, dry air
    • III-V, Si, other materials
  • Flip-chip Bonding
  • Wafer Bonding to 600°C
  • Molecular Vapor Deposition
Other Resources

Facility users will benefit from the strong internal program in
materials research and characterization at UCSB, through the
user-accessible Materials Research Labs (MRL)*.

Materials Characterization capabilities include:

  • Atomic Force Microscopy
  • Scanning Electron Microscopy
  • Transmission Electron Microscopy
  • Photoluminescence Spectroscopy
  • X-ray Diffraction
  • Scanning Auger Microscopy


Technical and educational staff services are possible through the generosity of the National Science Foundation through support via the NNIN.