The UCSB nanofabrication facility offers a wide spectrum of tools for your research needs.


Listed below is a broad overview of our capabilities.


Remote processing is also available.


If you would like to investigate other processing or characterization possibilities for your project, please contact:

Tom Reynolds:

This email address is being protected from spambots. You need JavaScript enabled to view it., (805) 893-3918 ext. 215

Brian Thibeault:

This email address is being protected from spambots. You need JavaScript enabled to view it., (805) 893-2268




E-beam Lithography: JEOL 6300FS

  • Resolution to 8 nm
  • 20 nm resolution in 500 um x 500 um field

Optical Lithography

  • Holography ≈ 200 nm
  • Projection Stepper ≈ 400 nm resolution; 150 nm registration
  • Contact Lithography (backside capability)

Nanoimprint Lithography

  • Thermal process to 200°C; 600 psi
  • UV curing
Thin Film Deposition

E-beam and Thermal Evaporation

  • Ai, Ti, Al, Au, Ni, Pd, Pt, Ag, Ge, Zn, W, Ta
  • Dielectric: SiO2, SrF, MgO, Ti O2, Ta2O5, SiO
  • Other materials are possible


  • SiO2, SiON, Si3N4, a-Si


  • Si, Co, Ni, Ti, W, Au, Al, ITO, SiO2, SiN, TiO2, AlN, Al2O3
  • Other materials are possible


  • Al2O3, HfO2, ZrO2, TiO2, SiO2, AlN, HfN, TiN
Dry Etching

CH4, H2, Ar RIE

  • II-VI etching
  • III-V electronic/optoelectronic devices

SF6, CHF3, CF4, O2, Ar RIE/ICP

  • General silicon, oxide, and nitride etch
  • Separate Bosch Si etch Silicon Carbides for MEMS
  • Call about special materials.

BCl3, Cl2, SiCI4, O2 Ar RIE/ICP

  • General semiconductor and metal
  • III-V etching with heated chuck for InP
  • Call about special materials.

XeF2 etching of Silicon and Germanium

Thin Film Characterization
  • SEM: FEI Sirion, JEOL7600
  • Profilometry
  • Spectroscopic Ellipsometry
  • Reflectometry
  • Probe Station with Curve Tracer
  • 4-Point Resistivity Mapping
  • Film Stress Measurement
  • AFM


Other Processes
  • Contact Annealing
  • Wet Chemical Etching
  • Critical Point Drying
  • Rapid Thermal Annealing
    • 1200°C in N2, H2N2, dry air
    • III-V, Si, other materials
  • Flip-chip Bonding
  • Wafer Bonding to 600°C
  • Molecular Vapor Deposition
Other Resources

Facility users will benefit by having access to multiple labs on campus to perform their research.  The list of Mult-User Labs can be found at the following website: