Panasonic ICP 4

Panasonic ICP 4

Equipment Description:
ICP #4

Manufacturer:
Panasonic Factory Solutions, Japan

Model:
E620-R&D

Instructions:
Operating Instruction Manual

 

 

 

 

 

 

 

General Information and Usage:

This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1250 W ICP power, 600 W RF substrate power, and RT-80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, He, and O2 for gas sources and can be used to etch a variety of materials from SiO2 to metals to compound semiconductors. The chamber evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. The system accepts 6” wafers (JEIDA Std) or pieces mounted to the wafers.

 

Detailed Specifications:

  • 1250 W ICP source, 600 W RF Sample Bias Source in etching chamber
  • RT - 80°C sample temperature for etching
  • Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT)
  • Cl2, BCl3, CF4, CHF3, SF6, Ar, N2, He, and O2 in etch chamber
  • Pieces possible by mounting to 6” wafer
  • Load-Locked
  • Up to 20 steps per recipe

 

Contact Information:

For additional information regarding the Panasonic ICP #4 or if you would like to inquire about using the UCSB Nanofabrication Facility, please contact This email address is being protected from spambots. You need JavaScript enabled to view it.  using the telephone number or e-mail address below. 


This email address is being protected from spambots. You need JavaScript enabled to view it.
Phone: (805) 893-3918 ext. 219
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Technical and educational staff services are possible through the generosity of the National Science Foundation through support via the NNIN.