Use Our Facility

Need a research tool, but would rather not buy it? You can rent it in a new nanofabrication facility with 12,700 ft² of clean room space to work in!

Affordable rates provide you with the tools you need, as well as training and support from our dedicated and knowledgeable staff, that is tailored to your specific research needs.

We support a broad line of lithography, thin-film deposition, reactive ion etching, and characterization tools in support of device fabrication for a variety of materials, including InP, GaAs, GaN, SiC, Si, and other novel materials.

Staff support is available for training, tool fixturing, process consultation, and hands-on work.

Over 40% of our more than 500 per annum user community are from outside academic institutions and industry, doing significant research in our facility.

  • image
  • image
  • image

Water with surfactant:

To remove large particulates not strongly bonded to the surface, a surfactant (like soap or Tergitol) in DI water with ultrasonic agitation is effective at removing this type of dirt. Follow with running DI rinse.


Solvent with Ultrasound:

For some larger particles/organic residues, ultrasonic agitation in a solvent such as Acetone can work.


Wet Etchants:

Some particulates can be effectively oxidized and removed by strong oxidizers.

  1. RCA Clean (preferred process) (step 1 is enough for most of our work):
    a) NH4OH:H2O2:DI 1:1:5 at 80°C for > 5 minutes. Finish with a DI rinse.
    b) HCl:H2O2:DI  1:1:6 at 80°C for 5 minutes. DI rinse.
    Note: a) will etch GaAs
  2. Pirhana etch:
    a) H2SO4:H2O2 4:1 90°C for 10 minutes.
    b) DI rinse and dry.
    Note: a) will etch both GaAs and InP related compounds


Reference: See Chapter 2 of “ULSI Technology” by C.Y. Chang and S.M. Sze for further information.