Use Our Facility

Need a research tool, but would rather not buy it? You can rent it in a new nanofabrication facility with 12,700 ft² of clean room space to work in!

Affordable rates provide you with the tools you need, as well as training and support from our dedicated and knowledgeable staff, that is tailored to your specific research needs.

We support a broad line of lithography, thin-film deposition, reactive ion etching, and characterization tools in support of device fabrication for a variety of materials, including InP, GaAs, GaN, SiC, Si, and other novel materials.

Staff support is available for training, tool fixturing, process consultation, and hands-on work.

Over 40% of our more than 500 per annum user community are from outside academic institutions and industry, doing significant research in our facility.

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Projection (Stepper) Lithography

 

 

 

 

 

 

 

 

 

We have two GCA i-line wafer steppers that use masks compatible with both systems. System Features are:

  • 5” x 5” x .09” mask size; special mask alignment marks available
  • 15 mm x 15 mm maximum die size
  • 1 cm x 1 cm pieces up to 4 inch wafers with custom wafer holders
  • Autofocus system
  • Resolution of ~ 500 nm (6300 system) and ~ 400 nm (Autostep 200)
  • Alignment accuracy of ~ 250 nm using manual alignment
  • Alignment accuracy of ~ 150 nm using automatic alignment
  • Positive and negative high resolution resists and processes available
  • Automatic leveling and mask aperturing on Autostep 200 system

 

Established Processes

 

Recipes for projection lithography are developed for flat silicon wafers. Exposure times and focus offsets may change depending on substrate type and surface topography. In general, an exposure time and projection lens focus variation is done to determine best focus. Also, for projection lithography using a monochromatic source, a resist post exposure bake (PEB) is needed to wash out standing wave effects in the resist sidewalls. Contrast enhancement materials (CEMs) are available to increase the process tolerance window and improve resolution. We also have some experience with RELACS for narrowing trench widths. Positive and negative resists are available.