Plasma Etching Systems

Plasma Etching Systems Etcher 1 Etcher 2

Equipment Description:
Plasma Etching Systems

Manufacturer:
Technics

Model:
PE-IIA

 

 

 

General Information and Usage:

These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si3N4 films. The systems are both equipped with O2 for organic removal. In addition to organic removal, the oxygen plasma is also useful for changing the surface polarity of organic films to facilitate wetting of water-based surface etchants. This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines. One system also has CF4/O2 88% / 12% for etching Si3N4. These systems are operated manually and no sign-up is required.

 

Detailed Specifications:

  • Gases used: CF4 / O2 and O2
  • ~ 10mT ultimate chamber pressure
  • 100 kHz directly coupled excitation source
  • Sample size: pieces to 6” wafers
  • Gas flow and power control
  • Typical process conditions:
    • Ashing: O2 300mT, 100W power, 30 sec.
    • Si3N4 Etching: CF4/O2 300mT, 100W, ~ 150 nm / min. etch rate

 

Contact Information:

For additional information regarding the Plasma Etching Systems or if you would like to inquire about using the UCSB Nanofabrication Facility, please contact This email address is being protected from spambots. You need JavaScript enabled to view it.  using the telephone number or e-mail address below. 


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Phone: (805) 893-3918 ext. 213
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Technical and educational staff services are possible through the generosity of the National Science Foundation through support via the NNIN.