Contact Lithography Contact lithography is used for critical dimensions down to 1-2 microns on pieces and exposure areas up to 6" wafers.
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Projection (Stepper) Lithography
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Laser Interference Lithography This page is under construction. |
Electron Beam Lithography This page is under construction. |
Lift-Off Techniques |
ReflowThis page is under construction. |
| Lithography Materials (Resists, etc.) Below is a listing of the lithography materials that we supply for the laboratory.
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Wafer Cleaning and Preparation Preparation of samples for photolithography may require a simple solvent clean, residual organic removal, particulate removal, HMDS pre-coating, or any combination depending on the condition of your wafer. Photoresist removal also depends on the conditions that the resist was exposed to during the processing after lithography. Below are links to the various techniques used in our laboratory for lithography preparation and photoresist removal. These are general techniques with some general guidelines to assist you in developing the process that will suit your needs.
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Lithography
We have several types of lithography available at the nanofabrication facility. 5 X Projection lithography on our stepper is for critical dimensions down to 500nm and for optical lithography needs where critical layer to layer alignments of better than 500 nm are needed. Pieces of 1 cm x 1 cm up to 4" wafers can be used. We can also make grating structures around 200 nm in period over a 1" x 1" area using laser interference lithography. Electron beam lithography can bring resolution down to below 30 nm and alignment accuracy down to 10 nm. Please click on the specific links below for detailed process information using each technique.