Nanotech Education Programs           

 
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Technician Internships in Nano-Technology (TINT)

Description

The purpose of this program is to introduce undergraduate students to techniques in nanofabrication and characterization. Applicants should be undergraduate students who are interested in entering the nanotechnology workforce. Generally speaking, these internships are in collaboration with international educational institutions. Students chosen for this position will work with advanced thin film and semiconductor fabrication equipment under guidance of engineers and researchers. No experience is necessary. Training will be provided. Regular reports and final reports will be required. This position is 40 hours per week for 6 months and begins in late January or early February. TINT pays a stipend of $7500 for 6 months, or $1250/month.

Eligibility

TINT applicants are chosen by Nanotech staff. Applicants must have completed at least 2 years of community college, trade school, or university, and have completed at least one year of Physics. Applicants must have a GPA of 2.5 or better. Overall GPA is considered, but it is not as important as math and science grades. Rather, Nanotech staff will evaluate each application—a combination of grades, application questions, and references. At least one letter of recommendation from a teacher is required. Recommendations may be emailed.

Applying to this program

If you are interested in applying to this program, please contact Jack Whaley (805)893-8174 whaley@ece.ucsb.edu or Brian Thibeault at 805-893-2268 thibeault@ece.ucsb.edu

Student
School
Country
Dates
Project
Timo Sperber Univ. of Applied Science Ulm Germany 3-1-2004 to 8-31-2004 Characterization and Optimization of the Deep RIE Bosch Process
Matthias Wiora Univ. of Applied Science Ulm Germany 9-1-2004 to 2-29-2005 Wafer Steppers; Magneton Sputtering of Thin Films, and Characterization of Reactive Sputtering of Various Films
Markus Bingert Univ. of Applied Science Ulm Germany 3-1-2005 to 8-31-2005

AC Reactive Sputtering of Aluminum Nitride Thin Films

E-beam Evaporator Calibration of CHA SEC600

DC Sputtering

Ian Carlson Univ. of California, Santa Barbara USA 7-1-2005 to 10-31-2005 Facilitization of a Nanofabrication Laboratory
Christian Hoegerle Univ. of Applied Science Ulm Germany 9-1-2005 to 2-28-2006 Development and Characterization of AFM-based Lithography
Thuy Ai Nguyen Vietnam National University of Ho Chi Minh City Vietnam 2-13-2006 to 8-12-2006 Anodizing Process of Aluminum Thin Films on Silicon Substrate for forming Alumina Template
Philipp Schlosser Univ. of Applied Science Ulm Germany 3-1-2006 to 8-31-2006, & 3-1-2007 to 8-31-2007 Laser Interference Lithography & Pattern Transfer
Alex Gmeiner Univ. of Applied Science Ulm Germany 3-1-2006 to 8-31-2006  
Michael Schnuerle Univ. of Applied Science Ulm Germany 9-1-2006 to 2-28-2007 Overview of Processes and Deposition of Amorphous Si
Manuel Koch Univ. of Applied Science Ulm Germany 9-1-2006 to 2-28-2007 Lithography Materials and Ion Beam Deposition
Sebastian Valet Univ. of Applied Science Ulm Germany 3-1-2007 to 8-31-2007 Photoresist Characterization for Stepper
Bernd Klein Univ. of Applied Science Ulm Germany 9-1-2007 to 3-1-2008  
©2006 Board of Regents of the University of California